Thin Film Deposition

Physical Vapor Deposition (PVD)
- Film is formed by atoms directly transported from source to the substrate
through gas phase
• Evaporation
• Thermal evaporation «
• E-beam evaporation «
• Sputtering
• DC sputtering «
• DC Magnetron sputtering «
• RF sputtering «
• Reactive PVD
Chemical Vapor Deposition (CVD)
- The film is formed by chemical reaction on the surface of the substrate
• Low-Pressure CVD (LPCVD) «
• Plasma-Enhanced CVD (PECVD) «
• Atmosphere-Pressure CVD (APCVD)
• Metal-Organic CVD (MOCVD)
Oxidation
Spin Coating
Plattin

General Characteristics of Thin Film Deposition
• Deposition Rate
• Film Uniformity
• Across wafer uniformity
• Run-to-run uniformity
• Materials that can be deposited
• Metal
• Dielectric
• Polymer
• Quality of Film – Physical and Chemical Properties
• Stress
• Adhesion
• Stoichiometry
• Film density, pinhole density
• Grain size, boundary property, and orientation
• Breakdown voltage
• Impurity level
• Deposition Directionality
• Directional: good for lift-off, trench filling
• Non-directional: good for step coverage
• Cost of ownership and operation